Abstract
The experimental team has developed a technology of step-by-step low-temperature diffusion doping of gadolinium and scandium into silicon that allows the clusters of impurity atoms to be uniformly distributed throughout the entire bulk of the silicon material. It was shown that, unlike the samples obtained under the high-temperature diffusion doping technology, in the samples obtained under the novel technology the team had detected any surface erosion or formation of alloys and silicide in the near-surface region. The authors have revealed increased thermostability and radiation resistance of silicon samples dotted with clusters of impurity atoms of gadolinium and scandium.
The authors have conducted comprehensive studies by using the techniques of tagged atoms, autoradiography, measurement of conductivity and Hall effect, isothermal relaxation of capacitance and current of diffusion, solubility, and electrophysical properties of scandium in silicon under various doping conditions and for a wide temperature range (1100 ÷ 1250 0С). Diffusion parameters, solubility and acceptor nature of scandium in silicon as well as thermal stability of silicon doped with gadolinium and scandium impurity atoms have been established.
