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Technology Group Research Article Article ID: igmin134

Properties of Indium Antimonide Nanocrystals as Nanoelectronic Elements

Semiconductor Technology
Nikolai Dmitrievich Zhukov *
Affiliation

Affiliation

    Limited Liability Company “NPP Volga”, Saratov, Russia

DOI10.61927/igmin134 Fulltext HTML Fulltext PDF Cite this article
DOI10.61927/igmin134 Fulltext HTML Fulltext PDF Cite this article

Abstract

By measurements on single nanocrystals of indium antimonide in the interelectrode nanogap of a scanning probe microscope, current-voltage characteristics with quasiperiodic current pulsations, are explained in the model of Bloch oscillations in a perfect nanocrystal, and individual sharp peaks - conductivity resonances, explained in the model of quantum-size limitation of the wave process of electron transport in a deep potential hole. The mutual influence of radiation from two statistical ensembles of nanocrystals from the same batch was experimentally studied and established. It is assumed that this radiation is entangled photons. It is proposed to use nanocrystals in nanoelectronics as a single-electron memristor, a single-photon bolometer, and a source of microwave radiation.

Figures

Typical current-voltage characteristics of QP-InSb samples without interaction (1 and 2) and with interaction with supposed radiation (1* and 2*). a – current-voltage characteristics with characteristic resonant peaks; b – without them. Figure 2: Typical current-voltage characteristics of QP-InSb...
Fragmentary display of electron motion options in the atomic structure of a nanocrystal. Figure 3: Fragmentary display of electron motion options in ...
a: Current-voltage characteristic: 1.1*.2 – NC-InSb; 3 – submicro-InSb test; 4 – ITO test; b – Conductivity peaks, numbers above the curves – calculated values of dimensions an for cases k = 1 (single and bottom) and k = 2 (top) Figure 1: a: Current-voltage characteristic: 1.1*.2 – NC-I...

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